发明名称 |
METHOD OF MANUFACTURING A Si(1-v-w-x)CwAlxNv SUBSTRATE, METHOD OF MANUFACTURING AN EPITAXIAL WAFER, Si(1-v-w-x)CwAlxNv SUBSTRATE, AND EPITAXIAL WAFER |
摘要 |
There are provided a method for manufacturing a Si(1-v-w-x)CwAlxNv substrate having a reduced number of cracks and high processibility, a method for manufacturing an epitaxial wafer, a Si(1-v-w-x)CwAlxNv substrate, and an epitaxial wafer. A method for manufacturing a Si(1-v-w-x)CwAlxNv substrate 10a includes the following steps. First, a Si substrate 11 is prepared. A Si(1-v-w-x)CwAlxNv layer (0<v<1, 0<w<1, 0<x<1, and 0<v+w+x<1) is then grown on the Si substrate at a temperature below 550° C.
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申请公布号 |
US2011039071(A1) |
申请公布日期 |
2011.02.17 |
申请号 |
US20090989015 |
申请日期 |
2009.04.17 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD |
发明人 |
SATOH ISSEI;MIYANAGA MICHIMASA;FUJIWARA SHINSUKE;NAKAHATA HIDEAKI |
分类号 |
B32B3/00;C23C14/34;C30B23/06;C30B25/02 |
主分类号 |
B32B3/00 |
代理机构 |
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