发明名称 PULSED DEPOSITION AND RECRYSTALLIZATION AND TANDEM SOLAR CELL DESIGN UTILIZING CRYSTALLIZED/AMORPHOUS MATERIAL
摘要 A method of depositing and crystallizing materials on a substrate Is disclosed, in a particular embodiment, the method may include creating a plasma having deposition- misted species and energy-carrying species. During a first time period, no bias voltage is applied to the substrate, and species are deposited on the substrate via plasma deposition. During a second lime period, a voltage is applied to the substrate, which attracts ions to and into the deposited species, thereby causing the deposited layer to crystallize. This process can be repeated until an adequate thickness is achieved, in another embodiment, the bias voltage or bias pulse duration can be varied to change the amount of crystallization that occurs. In another embodiment, a dopant may be used to dope the deposited layers.
申请公布号 WO2011019824(A2) 申请公布日期 2011.02.17
申请号 WO2010US45180 申请日期 2010.08.11
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.;MAYNARD, HELEN, L.;PAPASOULIOTIS, GEORGE, D.;SINGH, VIKRAM;HATEM, CHRISTOPHER, R.;GODET, LUDOVIC 发明人 MAYNARD, HELEN, L.;PAPASOULIOTIS, GEORGE, D.;SINGH, VIKRAM;HATEM, CHRISTOPHER, R.;GODET, LUDOVIC
分类号 H01L21/02 主分类号 H01L21/02
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