FORMING METHOD OF ELECTRONIC MATERIAL LAYER AND ELECTRONIC DEVICE AND APPARATUS ADOPTING THE METHOD
摘要
<p>PURPOSE: An electron material layer forming method, an electron device manufacturing method using the same, and an apparatus thereof are provided to obtain the electron material layer of high quality by forming the unit electron material layer through the neutral particle beam of the solid element. CONSTITUTION: A sputtering device(202) is included within a plasma chamber(200). A neutral particle beam apparatus(500) having a neutral particle beam chamber(501) is arranged on the upper part of the plasma chamber. A metallic reflector(502) biased to the predetermined negative pressure is arranged within the neutral particle beam chamber.</p>
申请公布号
KR20110016347(A)
申请公布日期
2011.02.17
申请号
KR20090074008
申请日期
2009.08.11
申请人
KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION
发明人
HONG, MUN PYO;JANG, JIN NYOUNG;LEE, YOO JONG;LEE, BONG JU;YOO, SUK JAE;KANG, SUK JOON