METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH BURIED GATE

摘要

PURPOSE: A semiconductor device manufacturing method equipped with a burying gate is provided to form the structure of a gap fill layer stably by forming a second gap fill layer on a first gap fill layer. CONSTITUTION: A trench(26) is formed by etching using the hard mask film on a substrate(21). A buried gate(28A) filling a part of the trench is formed. A first gap-fill film(29A) filling the top of the buried gate is formed. An etch stopping layer(30A) is formed on the front surface including the first gap-fill film. A second gap-fill film(34A) covering the first gap-fill film is formed on the etch stopping layer.