| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a light emitting element capable of forming an electrode excelling in wire bondability. <P>SOLUTION: In this method of manufacturing a light emitting element, a layer containing at least AuBe as an ohmic electrode material, a Ti layer and a Au layer are formed on a surface of a p-type semiconductor crystal of a semiconductor crystal wherein at least an n-type semiconductor crystal, a luminescent layer and the p-type semiconductor crystal containing Ga or In and having a carrier concentration of 1×10<SP>17</SP>to 1×10<SP>19</SP>/cm<SP>3</SP>are formed in this order, thereafter an ohmic electrode is formed by performing a heat treatment, and thereafter the semiconductor crystal is diced. The method of manufacturing a light emitting element includes a process of cleaning at least a surface of the formed ohmic electrode using an iodine potassium iodide solution. <P>COPYRIGHT: (C)2011,JPO&INPIT |
