| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory capable of performing high speed operation. SOLUTION: The semiconductor memory includes: memory cells mc00-mc11; an input/output terminal gda; an input/output terminal gdb; a data line mda for electrically connecting the memory cells mc00-mc11 with the input/output terminal gda; a data line mdb for electrically connecting the memory cells mc00-mc11 with the input/output terminal gdb; and a switch element 5 connected between the data line mda and the data line mdb to control an electrically conducting state between the data line mda and the data line mdb. COPYRIGHT: (C)2011,JPO&INPIT |
