| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor apparatus detecting a polishing finish point of CMP with accuracy even when the semiconductor apparatus is miniaturized. <P>SOLUTION: A method includes a polishing step of polishing an insulating film formed on a surface, and burying a shallow trench isolation groove of the surface of a substrate while monitoring a time variation of an interference light of the light irradiated onto the insulation film. After a lapse of the shortest polishing time preliminarily set depending on a scribe area corresponding to a scribe region of the substrate, the polishing step is finished at the time point when the time variation of the interference light satisfies a predetermined condition. For example, after a lapse of the shortest polishing time of 50 seconds, the time point 54 seconds when the time variation of the interference light strength changes from decrease to increase is detected as the polishing finish point. A wrong detection is prevented even when the minimum point 48 seconds caused by noise appears. <P>COPYRIGHT: (C)2011,JPO&INPIT |
