| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of fixing potential voltages of the entire region of a semiconductor layer (active layer) and stabilizing the potential voltage. SOLUTION: In the semiconductor device 1, an LDMOSFET (lateral double-diffused MOSFET) 3a is formed on an SOI (silicon-on-insulator) substrate 2. The LDMOSFET 3a comprises an n-type drain region 21 and a p-type source region 31, formed on a semiconductor layer 13 of the SOI substrate 2. The n-type drain region 21 is arranged at the center part of the semiconductor layer 13, and the p-type source region 31 is arranged (expanded) toward an edge of the semiconductor layer 13. As a result, all the regions of the semiconductor layer 13 become of a structure that are connected to either the source electrode 42a or the drain electrode 41a of the LDMOSFET 3a, the potential is fixed over all the regions of semiconductor layer 13, thereby the potential can be stabilized over all the regions of the semiconductor layer 13. COPYRIGHT: (C)2011,JPO&INPIT
|
