| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory capable of reducing leakage current in a circuit associated with a global input/output line when a reading or writing operation is performed. <P>SOLUTION: The data control circuit includes: an input/output line precharge unit for precharging a global input/output line when a reading or writing operation is not performed; and a driver that includes a plurality of MOS transistors, and receives, when the reading operation is performed, data of a local input/output line and a reverse local input/output line to drive the global input/output line. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
