| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, which improves reliability of a semiconductor chip. <P>SOLUTION: A dicing step of cutting a wafer (semiconductor wafer) 40 along a scribe region 40b to obtain a plurality of semiconductor chips includes a laser processing step of irradiating the scribe region 40b with a laser beam before cutting the wafer 40. In the laser processing process, a laser processing region 43 including a metal pattern 41a formed on the principal surface 3a of the scribe region 40b is irradiated with a first laser beam having first energy from the side of a principal surface 3a to remove an insulating layer (first insulating layer) 34. Then, the laser processing region 44 including the end of the laser processing region 44 on the side of a device region 40a is irradiated with a second laser beam having second energy smaller than the first energy to remove metal residues formed in the laser processing region 44. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
