| 摘要 |
PROBLEM TO BE SOLVED: To provide a device with further aim at a plurality of capacitors which are demanded having differing characteristics on the same substrate. SOLUTION: A lower-layer capacitor comprising a lower electrode, an upper electrode and a dielectric film arranged between both electrodes are disposed on the semiconductor substrate. A first capacitor is coated with a first interlayer insulating film. A plurality of upper-layer capacitors are arranged on the first interlayer insulating film. The upper-layer capacitor comprises the lower electrode, the upper electrode and the dielectric film disposed between both electrodes and is superimposed on the lower-layer capacitor, in plan view. A plurality of transistors are arranged on the semiconductor substrate, corresponding to the upper-layer capacitor. The transistor configures a memory cell, together with the upper-layer capacitor. COPYRIGHT: (C)2011,JPO&INPIT |
