| 摘要 |
An SOI wafer and a method for forming the same, where the method for forming an SOI wafer includes: preparing a monocrystalline silicon wafer on which a mask layer is formed; etching the mask layer and the monocrystalline silicon wafer to form several trenches; forming a first insulating layer on the sidewalls and the bottoms of the trenches; etching and removing the first insulating layer on the bottoms of the trenches; etching along the trenches the monocrystalline silicon wafer beneath the trenches to form cavities; processing the inner walls of the cavities to form a second insulating layer; and filling up the trenches and the cavities with an insulating material layer. The process of the invention is easy to be implemented at a low manufacturing cost and an SOI wafer being formed is of high quality while being capable of being compatible with a standard process of manufacturing a bulk silicon CMOS.
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