发明名称 METHOD AND SYSTEM FOR THE PRODUCTION OF PURE SILICON
摘要 A process for producing high-purity silicon includes (1) preparing trichlorosilane by reacting silicon with hydrogen chloride in at least one hydrochlorination process; (2) preparing monosilane by disproportionation of the trichlorosilane to provide a monosilane-containing reaction mixture containing silicon tetrachloride as a by-product; (3) in parallel to (1), reacting silicon tetrachloride obtained as the by-product in (2) with silicon and hydrogen in at least one converting process to produce a trichlorosilane-containing reaction mixture; and (4) thermally decomposing the monosilane into silicon and hydrogen.
申请公布号 KR20110015527(A) 申请公布日期 2011.02.16
申请号 KR20107024197 申请日期 2009.03.31
申请人 SCHMID SILICON TECHNOLOGY GMBH 发明人 SCHMID CHRISTIAN;PETRIK ADOLF;HAHN JOCHEM
分类号 C01B33/029;C01B33/04;C01B33/107 主分类号 C01B33/029
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