发明名称 JUNCTION FORMATION ON WAFER SUBSTRATES USING GROUP IV NANOPARTICLES
摘要 <p>A method of forming a diffusion region is disclosed. The method includes depositing a nanoparticle ink on a surface of a wafer to form a non-densified thin film, the nanoparticle ink having set of nanoparticles, wherein at least some nanoparticles of the set of nanoparticles include dopant atoms therein. The method also includes heating the non-densified thin film to a first temperature and for a first time period to remove a solvent from the deposited nanoparticle ink; and heating the non-densified thin film to a second temperature and for a second time period to form a densified thin film, wherein at least some of the dopant atoms diffuse into the wafer to form the diffusion region.</p>
申请公布号 EP2283514(A1) 申请公布日期 2011.02.16
申请号 EP20080873989 申请日期 2008.04.25
申请人 INNOVALIGHT, INC. 发明人 TERRY, MASON;ANTONIADIS, HOMER;POPLAVSKYY, DMITRY;KELMAN, MAXIM
分类号 H01L21/225;H01L21/20;H01L21/336;H01L21/8238;H01L31/18 主分类号 H01L21/225
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