Group III nitride semiconductor laser diode

摘要

The group III nitride semiconductor laser diode 11 includes a group III nitride substrate 13, an n-type cladding layer 15, an active layer 17, a p-type cladding layer 19, a first optical guiding layer 21, and a second optical guiding layer 23. The group III nitride substrate 13 has a semi-polar primary surface 13a. The n-type cladding layer 15 comprises aluminum-containing group III nitride. The p-type cladding layer 19 comprises aluminum-containing group III nitride. The first optical guiding layer 21 is provided between the n-type cladding layer 15 and the active layer 17. The second optical guiding layer 23 is provided between the p-type cladding layer 19 and the active layer 17. The optical guiding layers 21 and 23, respectively, include first layers 31 and 35 each comprising GaN, and the second layers 33 and 37 each comprising InGaN. The total thickness of the first layer and the second layer in each of the optical guiding layers 21 and 23 is greater than 0.1 µm.