| 摘要 |
A MOS type SiC semiconductor device having high reliability and a longer lifespan against TDDB of a gate oxide film is disclosed. The semiconductor device includes a MOS (metal-oxide-semiconductor) structure having a silicon carbide (SiC) substrate (1), a polycrystalline Si gate electrode (7), a gate oxide film (9) interposed between the SiC substrate (1) and the polycrystalline Si gate electrode (7) and formed by thermally oxidizing a surface of the SiC substrate (1), and an ohmic contact (17) electrically contacted with the SiC substrate (1). The semiconductor device further includes a polycrystalline Si thermally-oxidized film (8) formed by oxidizing a surface of the polycrystalline Si gate electrode (7). The gate oxide film (9) has a thickness of 20 nm or less, advantageously 15 nm or less. |
