发明名称 |
Method for forming semiconductor structure with improved isolation between two layers of polycrystalline silicon |
摘要 |
In a field effect device such as a charge coupled device or field effect transistor in which at least two levels of polycrystalline silicon conductors are used; these two levels of polycrystalline silicon are isolated from one another with a dielectric layer. Disclosed is a composite dielectric layer formed either by in situ oxidation of the first polycrystalline silicon layer plus chemical vapor deposited silicon dioxide or, in the alternative, the composite dielectric layer is formed by a phosphosilicate glass layer with thermal reoxidation of the first polycrystalline silicon layer.
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申请公布号 |
US4251571(A) |
申请公布日期 |
1981.02.17 |
申请号 |
US19780902127 |
申请日期 |
1978.05.02 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GARBARINO, PAUL L.;MAKAREWICZ, STANLEY R.;SHEPARD, JOSEPH F. |
分类号 |
H01L29/762;H01L21/28;H01L21/321;H01L21/339;H01L21/8234;H01L29/51;H01L29/93;(IPC1-7):H01L21/31 |
主分类号 |
H01L29/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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