发明名称 |
DICING A SEMICONDUCTOR WAFER |
摘要 |
<p>A method of dicing a semiconductor wafer comprises scribing at least one dielectric layer along dice lanes to remove material from a surface of the wafer using a laser with a pulse-width between 1 picosecond and 1000 picoseconds and with a repetition frequency corresponding to times between pulses shorter than a thermal relaxation time of the material to be scribed. The wafer is then diced through a metal layer and at least partially through a substrate of the semiconductor wafer.</p> |
申请公布号 |
EP2283518(A1) |
申请公布日期 |
2011.02.16 |
申请号 |
EP20090738218 |
申请日期 |
2009.04.30 |
申请人 |
ELECTRO SCIENTIFIC INDUSTRIES, INC. |
发明人 |
BOYLE, ADRIAN;CALLAGHAN, JOSEPH;MCKIERNAN, FINTAN |
分类号 |
H01L21/78;B23K26/06;B23K26/36;B23K26/40;B28D5/00 |
主分类号 |
H01L21/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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