Semiconductor device having multiple element formation regions and manufacturing method thereof

摘要

In a manufacturing of a semiconductor device (1), at least one of elements (7, 9) is formed in each of element formation regions (5) of a substrate (2) having a main side and a rear side, and the substrate is thinned by polished from a rear side of the substrate, and then, multiple trenches (3) are formed on the rear side of the substrate, so that each trench reaches the main side of the substrate. After that, an insulating material is deposited over an inner surface of each trench to form an insulating layer (4) in the trench, so that the element formation regions are isolated. Thereby, generation of cracks and structural steps in the substrate and separation of element formation regions from the substrate can be suppressed.