| 发明名称 |
METHOD FOR PRODUCING SEMI-CONDUCTING DEVICES AND DEVICES OBTAINED WITH THIS METHOD |
| 摘要 |
A semi-conducting device has at least one layer doped with a doping agent and a layer of another type deposited on the doped layer in a single reaction chamber. An operation for avoiding the contamination of the other layer by the doping agent separates the steps of depositing each of the layers. |
| 申请公布号 |
KR101015161(B1) |
申请公布日期 |
2011.02.16 |
| 申请号 |
KR20057006591 |
申请日期 |
2003.10.22 |
| 申请人 |
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发明人 |
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| 分类号 |
H01L21/20;C23C16/44;C23C16/455;H01L21/205;H01L21/22;H01L31/0288;H01L31/075;H01L31/18;H01L31/20 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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| 地址 |
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