摘要 |
<p>The invention relates to a charged particle multi-beamlet lithographic system for exposing a target (11) using a plurality of beamlets (21). The system comprises a beamlet generator for generating a plurality of beamlets, a beamlet blanker (6) for controllably blanking beamlets; and an array of projection lens systems (10) for projecting unblanked beamlets on to the surface of the target. The beamlet generator comprises at least one charged particle source (1) for generating a charged particle beam, a sub-beam generator (4A) for defining a plurality of sub-beams from the charged particle beam, a sub-beam manipulator array (4B, 5) for influencing the sub-beams; and an aperture array (4C) for defining beamlets from the sub-beams.</p> |