Semiconductor substrate comprising at least a buried insulating cavity

摘要

A semiconductor substrate comprising at least a buried insulating cavity (10b, 10d) and comprising:
- a semiconductor substrate (7) having a first type of concentration and having a plurality of trenches (8, 10),
- a surface layer (7a, 9a) on said semiconductor substrate (7) in order to close superficially said plurality of trenches (8, 10) forming said at least a buried insulating cavity (10b, 10d);
- a first semiconductor material layer (9) on said surface layer (7a, 9a) having the same first type of concentration as said semiconductor substrate (7), said first semiconductor material layer (9) comprising at least a trench (11) which is in communication with said at least a buried insulating cavity (10b, 10d).