Solid state imaging device having a photodiode and a MOSFET

摘要

A solid state imaging device comprising:
a gate insulating film (12) formed on a semiconductor substrate (11) of a first conductivity type;
a readout gate electrode (13a) selectively formed on the gate insulating film (12);
a diffusion region (14a) of a second conductivity type formed at a surface within the semiconductor substrate (11) at one end of the readout gate electrode (13a);
a signal storage region (15) of the second conductivity type formed at the surface within the semiconductor substrate (11) at other end of the readout gate electrode (13a);
a surface shield region (21) of the first conductivity type formed at a surface within the signal storage region (15);
a silicide block layer (19) covering at least part of the signal storage region (15); and
a metal silicide layer (24a) formed on the diffusion region (14a), wherein
the readout gate electrode (13a) comprises a first gate electrode;
a second gate electrode (13b) is provided on an element isolation region (STI), and
the silicide block layer (19) is formed between the first and second gate electrodes.