Nitride/zinc oxide based light-emitting diodes

摘要

A light-emitting nitride/zinc oxide based compound semiconductor device of double heterostructure. The double-heterostructure includes a light-emitting layer formed of an Al1-x-yInxGayN; 0≦̸x<1, 0<y≦̸1, and x+y=0.1 to 1 compound semiconductor doped an impurity. Single or multi quantum well light-emitting active layers Al1-x-yInxGayN/GaN; 0≦̸x<1, 0<y≦̸1, and x+y=0.1 to 1 are positioned between p-type GaN and n-type ZnO substrates.