发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to reduce the power consumption of the semiconductor device by suppressing voltage drop due to a wiring resistor. CONSTITUTION: A substrate(5300) has an insulation surface. A pixel(5301) is formed on the substrate. A first thin film transistor comprising the pixel unit and a second thin film transistor comprising a driving circuit are top gate bottom contact type transistors. The electrode and the semiconductor layer have transmissivity in the pixel unit. The electrode of the driving circuit has lower resistance than any electrodes of the transistor in the pixel unit. |
申请公布号 |
KR20110015388(A) |
申请公布日期 |
2011.02.15 |
申请号 |
KR20100075561 |
申请日期 |
2010.08.05 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KIMURA HAJIME;SAKATA JUNICHIRO;TOYOTAKA KOHEI |
分类号 |
H01L29/786;G02F1/136 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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