发明名称 |
Non-volatile semiconductor device |
摘要 |
A nonvolatile semiconductor device according to example embodiments may include a plurality of memory cells on a semiconductor substrate and at least one selection transistor on the semiconductor substrate, wherein the at least one selection transistor may be disposed at a different level from the plurality of memory cells. The at least one selection transistor may be connected to a data line and/or a power source line via a first contact and/or a third contact, respectively. The at least one selection transistor may be connected to the plurality of memory cells via a second contact and/or a fourth contact. The active layer of the at least one selection transistor may contain an oxide. Accordingly, the nonvolatile semiconductor device according to example embodiments may include a selection transistor having a reduced size.
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申请公布号 |
US7889552(B2) |
申请公布日期 |
2011.02.15 |
申请号 |
US20080068409 |
申请日期 |
2008.02.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK JAE-CHUL;HYUN JAE-WOONG;PARK YOUNG-SOO;KIM SUN-IL |
分类号 |
G11C11/34;G11C16/04 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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