发明名称 VERARBEITUNGSSYSTEM UND VERFAHREN ZUM CHEMISCHEN BEHANDELN EINES SUBSTRATS
摘要 A processing system and method for chemically treating a substrate, wherein the processing system comprises a temperature controlled chemical treatment chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate holder is thermally insulated from the chemical treatment chamber. The substrate is exposed to a gaseous chemistry, without plasma, under controlled conditions including wall temperature, surface temperature and gas pressure. The chemical treatment of the substrate chemically alters exposed surfaces on the substrate.
申请公布号 AT496391(T) 申请公布日期 2011.02.15
申请号 AT20040757455T 申请日期 2004.03.16
申请人 TOKYO ELECTRON LTD. 发明人 HAMELIN, THOMAS;WALLACE, JAY;LAFLAMME, ARTHUR
分类号 H01L21/00;C23C16/44;C25D11/02;H01L21/677 主分类号 H01L21/00
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