发明名称 Circuit and method for retrieving data stored in semiconductor memory cells
摘要 A circuit comprises at least one memory cell adapted to store data in terms of values of an electrical characteristic thereof, which exhibits a variability with temperature according to a first variation law; a voltage generator is provided for generating a voltage to be supplied to the at least one memory cell for retrieving the data stored therein, the voltage generator including first means adapted to cause the generated voltage take a value in a set of target values including at least one target value, corresponding to an operation to be performed on the memory cell. The voltage generator comprises second means for causing the value taken by the generated voltage vary with temperature according to a prescribed second variation law exploiting a compensation circuit element having said electrical characteristic.
申请公布号 US7889586(B2) 申请公布日期 2011.02.15
申请号 US20080248843 申请日期 2008.10.09
申请人 CRIPPA LUCA;RAGONE GIANCARLO;SANGALLI MIRIAM;MICHELONI RINO 发明人 CRIPPA LUCA;RAGONE GIANCARLO;SANGALLI MIRIAM;MICHELONI RINO
分类号 G11C7/04 主分类号 G11C7/04
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