VARIABLE RESISTANCE MEMORY DEVICE AND PROGRAM METHOD THEREOF

摘要

PURPOSE: A variable resistance memory device and a programming method thereof are provided to increase the lifetime of a device by reducing a switching current inputted to a variable resistance device. CONSTITUTION: A bypass circuit(130) bypasses a switching current inputted to a variable resistance memory cell. A voltage sensor outputs a control signal according to the set state of the variable resistance memory cell. A bypass transistor is connected in parallel to a variable resistance memory cell(120). An inverter inverts the voltage of an input terminal of the pulse and provides the inverted signal as a control signal. A delay circuit(110) outputs a control signal by delaying the set pulse.