| 摘要 |
A semiconductor device with semiconductor chips stacked thereon is provided. The semiconductor device is reduced in size and thickness. In a first memory chip and a second memory chip, first pads of the first memory chip located at a lower stage and hidden by the second memory chip located at an upper stage are drawn out by re-wiring lines, whereby the first pads projected and exposed from the overlying second memory chip and second pads of the second memory chip can be coupled together through wires. Further, a microcomputer chip and third pads formed on re-wiring lines are coupled together through wires over the second memory chip, whereby wire coupling of the stacked memory chips can be done without intervention of a spacer.
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