NON-VOLATILE MEMORY DEVICE OUTPUTTING ANALOG SIGNAL AND MEMORY SYSTEM HAVING THE SAME

摘要

PURPOSE: A nonvolatile memory device and a memory system including the same are provided to perform a reading operation for high speed error correction by correcting an error by referring to binary data. CONSTITUTION: A semiconductor memory device outputs a plurality of analog signals detected from a memory cell. A page buffer(124) senses and latches data of a plurality of nonvolatile memory cells(120). A converter converts a plurality of analog signals to binary data. A memory controller corrects an error by referring to the binary data. A switch circuit selectively connects a plurality of bit lines to a page buffer or analog output circuit(126,127).