发明名称 ORGANIC DIELECTRIC COMPOSITION, AND ORGANIC THIN LAYER TRANSISTOR COMPRISING SAME
摘要 <p>PURPOSE: An organic insulation film composition and an organic thin film transistor using the same are provided to reduce hysteresis by forming a gate insulation layer through a low temperature curing process when an organic thin film transistor is driven. CONSTITUTION: An organic insulation film composition includes novolak resin, cross-linking agents, a photoinitiator, and solvents. The organic insulation film composition is coated on a base material and is softly baked. The organic insulation film composition is optically cured by light irradiation and then is thermally processed. A pattern is formed by developing the organic insulation film composition with developers after the light irradiation. An organic thin film transistor includes a gate insulation layer(3), an organic semiconductor layer(6), and an electrode layer.</p>
申请公布号 KR20110015266(A) 申请公布日期 2011.02.15
申请号 KR20090072903 申请日期 2009.08.07
申请人 DONGJIN SEMICHEM CO., LTD.;KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION 发明人 LEE, HO JIN;KIM, BYUNG UK;KIM, WE YONG;HONG, MOON PYO;KIM, DOO HYUN
分类号 H01L29/786;H01B3/36 主分类号 H01L29/786
代理机构 代理人
主权项
地址