| 摘要 |
PURPOSE: A light emitting device and a manufacturing method thereof are provided to improve the reliability of the light emitting device by using an oxide semiconductor layer which is thermally processed. CONSTITUTION: A first thin film transistor(460) comprises a gate electrode layer, a gate insulation layer, a source electrode layer, a drain electrode layer and an oxide semiconductor layer(454). The oxide semiconductor layer is formed on the gate insulation layer and is overlapped with the source electrode layer and the drain electrode layer. A second thin film transistor includes an oxide insulation layer, a connection electrode layer(429), a color filter layer, a first electrode, a light emitting layer, and a second electrode. The connection electrode layer is formed on the oxide insulation layer and is electrically connected to the drain electrode layer. |
