发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To eliminate hindrances to the characteristics of the titled device caused by sputtering at the time of welding or the decrease in reliability by a method wherein the inside of the weld between a cap and a stem subjected to projection welding is provided with a projection and a groove opposed via narrow air gap. CONSTITUTION:The periphery of the cap 6 is provided inside with another annular projection 9 concentrically beside the annular projection 5 for projection welding, and the V-groove 10 is formed in the stem 1 at the position corresponding to the projection 9 inside the cap. The V-groove can be formed by press or by cutting work; however, it must have a depth and a width slightly larger than the height of the projection 9 and its width. This is to produce the air gap 11 between the projection 9 and the groove at the time of projection welding, and then to prevent the flow of current through this part. Thereby, the projection 5 melts and forms a nugget and at the same time sputtering 8 generates; however, it does not come more inside because of the narrow air gap between the inside projection 10 and the V-groove. Therefore, the deposit of the sputtering to a semiconductor element 2, a conductor 4, or a lead terminal 3 is prevented.
申请公布号 JPS60103648(A) 申请公布日期 1985.06.07
申请号 JP19830211544 申请日期 1983.11.10
申请人 FUJI DENKI SEIZO KK 发明人 KIBUNE FUKASHI;MATSUDA SEIJI
分类号 H01L23/04;H01L23/10 主分类号 H01L23/04
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