发明名称 |
Forming method of electrode and manufacturing method of semiconductor device |
摘要 |
A forming method of an electrode includes the steps of providing an electrode material on a conductive part; exposing the electrode material at a temperature equal to or higher than a melting point of the electrode material in an oxidizing atmosphere; and exposing the melted electrode material, in a reducing atmosphere, at a temperature equal to or higher than the melting point of the electrode material and lower than the temperature at which the electrode material is exposed in the oxidizing atmosphere.
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申请公布号 |
US7888258(B2) |
申请公布日期 |
2011.02.15 |
申请号 |
US20080143921 |
申请日期 |
2008.06.23 |
申请人 |
FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
AKUTAGAWA YOSHITO;MATSUI HIROYUKI;MAKINO YUTAKA |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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