发明名称 Forming method of electrode and manufacturing method of semiconductor device
摘要 A forming method of an electrode includes the steps of providing an electrode material on a conductive part; exposing the electrode material at a temperature equal to or higher than a melting point of the electrode material in an oxidizing atmosphere; and exposing the melted electrode material, in a reducing atmosphere, at a temperature equal to or higher than the melting point of the electrode material and lower than the temperature at which the electrode material is exposed in the oxidizing atmosphere.
申请公布号 US7888258(B2) 申请公布日期 2011.02.15
申请号 US20080143921 申请日期 2008.06.23
申请人 FUJITSU SEMICONDUCTOR LIMITED 发明人 AKUTAGAWA YOSHITO;MATSUI HIROYUKI;MAKINO YUTAKA
分类号 H01L21/44 主分类号 H01L21/44
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