SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to obtain a thin film transistor with high electrical property and high reliability by using an oxide semiconductor layer. CONSTITUTION: A driving circuit unit and a display unit have a thin film transistor, a first wiring, and a second wiring. A semiconductor layer is comprised of an oxide semiconductor. The thin film transistor has a source electrode layer or drain electrode layer(165b) which is positioned on the inner side than the peripheral side of the semiconductor layer. The thin film transistor of the driving circuit unit is formed by inserting the semiconductor layer with a gate electrode and a conductive layer(162). The first wiring and the second wiring are electrically connected on the opening formed on the gate insulation layer through an oxide conductive layer.