发明名称 |
Semiconductor memory device including memory cell array having dynamic memory cell, and sense amplifier thereof |
摘要 |
A semiconductor memory device and a sense amplifier thereof are provided. The semiconductor memory device includes a memory cell array and a plurality of sense amplifiers. The memory cell array includes a memory cell array block having a plurality of memory cells. Each of the plurality of sense amplifiers is configured to apply, based on a restore signal, a first voltage to a corresponding bit line to restore a first data value in a selected memory cell of the plurality of memory cells if a read value in the selected memory cell is the first data value and apply a second voltage based on the restore signal to the corresponding bit line to prevent a second data value from being restored in the selected memory cell if the read value in the selected memory cell is the second data value.
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申请公布号 |
US7889564(B2) |
申请公布日期 |
2011.02.15 |
申请号 |
US20090461746 |
申请日期 |
2009.08.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JOO HAN-SUNG;LEE JAE-WOOK |
分类号 |
G11C16/06 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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