发明名称 Semiconductor memory device including memory cell array having dynamic memory cell, and sense amplifier thereof
摘要 A semiconductor memory device and a sense amplifier thereof are provided. The semiconductor memory device includes a memory cell array and a plurality of sense amplifiers. The memory cell array includes a memory cell array block having a plurality of memory cells. Each of the plurality of sense amplifiers is configured to apply, based on a restore signal, a first voltage to a corresponding bit line to restore a first data value in a selected memory cell of the plurality of memory cells if a read value in the selected memory cell is the first data value and apply a second voltage based on the restore signal to the corresponding bit line to prevent a second data value from being restored in the selected memory cell if the read value in the selected memory cell is the second data value.
申请公布号 US7889564(B2) 申请公布日期 2011.02.15
申请号 US20090461746 申请日期 2009.08.24
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JOO HAN-SUNG;LEE JAE-WOOK
分类号 G11C16/06 主分类号 G11C16/06
代理机构 代理人
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