发明名称 Method to form high efficiency GST cell using a double heater cut
摘要 Embodiments of the present invention provide a method that includes providing wafer including multiple cells, each cell including at least one emitter. The method further includes performing a lithographic operation in a word line direction of the wafer across the cells to form pre-heater element arrangements, performing a lithographic operation in a bit line direction of the wafer across the pre-heater element arrangements to form a pre-heater element adjacent each emitter, and performing a lithographic operation in the word line direction across a portion of the pre-heater elements to form a heater element adjacent each emitter. Other embodiments are also described.
申请公布号 US7888166(B2) 申请公布日期 2011.02.15
申请号 US20100724266 申请日期 2010.03.15
申请人 MARVELL WORLD TRADE LTD. 发明人 SUTARDJA PANTAS;WU ALBERT;CHANG RUNZI;WEI CHIEN-CHUAN;LEE WINSTON;LEE PETER
分类号 H01L21/00;H01L29/18 主分类号 H01L21/00
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