发明名称 |
Semiconductor light emitting device and method for manufacturing the same |
摘要 |
Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: a first conductive type semiconductor layer; an active layer on the first conductive type semiconductor layer; an undoped semiconductor layer on the active layer; a first delta-doped layer on the undoped semiconductor layer; and a second conductive type semiconductor layer on the first delta-doped layer.
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申请公布号 |
US7888693(B2) |
申请公布日期 |
2011.02.15 |
申请号 |
US20100659208 |
申请日期 |
2010.03.01 |
申请人 |
LG INNOTEK CO., LTD. |
发明人 |
KIM TAE YUN;SON HYO KUN |
分类号 |
H01L33/00;H01L29/24;H01L33/32 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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