发明名称 Three-dimensional integrated circuit structure
摘要 A semiconductor structure includes an interconnect region and a semiconductor stack bonded to the interconnect region through a bonding region. The stack includes at least two semiconductor layers having different electrical properties. The stack also includes single crystalline semiconductor material. The stack can be processed to form a mesa structure and the mesa structure can be processed to from a vertically oriented semiconductor device.
申请公布号 US7888764(B2) 申请公布日期 2011.02.15
申请号 US20060606523 申请日期 2006.11.30
申请人 LEE SANG-YUN 发明人 LEE SANG-YUN
分类号 H01L31/06 主分类号 H01L31/06
代理机构 代理人
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