发明名称 HYBRID MEMORY MANAGEMENT
摘要 Methods and apparatus for managing data storage in hybrid memory devices utilizing single level and multi-level memory cells. Logical addresses can be distributed between single level and multilevel memory cells based on a frequency of write operations performed. Initial storage of data corresponding to a logical address in memory can be determined by various methods including initially writing all data to single level memory or initially writing all data to multilevel memory. Other methods permit a host to direct logical address writes to single level or multilevel memory cells based on anticipated usage.
申请公布号 KR20110015023(A) 申请公布日期 2011.02.14
申请号 KR20107029386 申请日期 2009.05.28
申请人 MICRON TECHNOLOGY, INC. 发明人 RADKE WILLIAM H.;MURRAY MICHAEL;FURUHJELM MARTIN RAGNAR;GELDMAN JOHN
分类号 G06F12/06;G11C16/00 主分类号 G06F12/06
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