| 摘要 |
<p>PURPOSE: A semiconductor device and a forming method thereof are provided to prevent the deterioration of a semiconductor device due to a GIDL(Gate Induced Drain Leakage) by effectively controlling the thickness of a gate oxide layer formed on a recess surface. CONSTITUTION: A semiconductor substrate(100) comprises an active area(104) which is defined by an element isolation layer(102). A nitride layer is formed on the semiconductor substrate. A recess(108) is arranged within the semiconductor substrate that includes the active area. A first oxide layer(116) is included in the recess side wall. A second oxide layer(118) is included in the lower part of the recess exposed by the first oxide layer.</p> |
