CU-GA SINTERED BODY SPUTTERING TARGET AND METHOD FOR PRODUCING THE TARGET

摘要

Disclosed is a sintered Cu-Ga alloy sputtering target which is characterized by being composed of a sintered body of a Cu-Ga alloy powder that has a Ga concentration of 20-60 at% with the balance made up of Cu and unavoidable impurities. The sintered Cu-Ga alloy sputtering target is also characterized in that the sintered body has a relative density of not less than 97%, an average crystal grain size of 5-30 µm and a flexural strength of not less than 150 MPa. The Cu-Ga target is free from compositional segregation, and has low brittleness and a high Ga concentration of 25-45 at%. Also disclosed is a method for producing the Cu-Ga target. Since the sintered Cu-Ga alloy sputtering target improves the yields of target production and CIGS solar cell production and thus can reduce the production cost of a CIGS solar cell, the sintered Cu-Ga alloy sputtering target is useful as a material for CIGS solar cell production by a selenization method.