发明名称 NON-VOLATILE MEMORY SYSTEM AND INTERLEAVE UNIT CONFIGUARATION METHOD THEREOF
摘要 PURPOSE: A nonvolatile memory system and a method for comprising an interleaving unit are provided to improve the speed of a memory system through an interleaving operation with an interleaving unit. CONSTITUTION: A memory controller comprise super phases about flash memory devices(231,241,251,261). Each memory cell array is divided into a page, a block, and a plane. The flash memory devices include a page buffer unit. A first page is comprised of an LSB page block. A second page is comprised of an MSB page block.
申请公布号 KR20110014919(A) 申请公布日期 2011.02.14
申请号 KR20090072525 申请日期 2009.08.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, HYUN JU;CHOI, CHANG EUN;JEON, TAE KEUN;BAE, KYOUNG RYUN
分类号 G11C16/34;G11C16/06;G11C16/10 主分类号 G11C16/34
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