发明名称 |
NON-VOLATILE MEMORY SYSTEM AND INTERLEAVE UNIT CONFIGUARATION METHOD THEREOF |
摘要 |
PURPOSE: A nonvolatile memory system and a method for comprising an interleaving unit are provided to improve the speed of a memory system through an interleaving operation with an interleaving unit. CONSTITUTION: A memory controller comprise super phases about flash memory devices(231,241,251,261). Each memory cell array is divided into a page, a block, and a plane. The flash memory devices include a page buffer unit. A first page is comprised of an LSB page block. A second page is comprised of an MSB page block. |
申请公布号 |
KR20110014919(A) |
申请公布日期 |
2011.02.14 |
申请号 |
KR20090072525 |
申请日期 |
2009.08.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, HYUN JU;CHOI, CHANG EUN;JEON, TAE KEUN;BAE, KYOUNG RYUN |
分类号 |
G11C16/34;G11C16/06;G11C16/10 |
主分类号 |
G11C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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