METHOD OF MANUFACTURING RACETRACK MEMORY

摘要

PURPOSE: A method for manufacturing a racetrack memory is provided to easily form a magnetic nano line by using a pattern forming device using a crystal structure of materials. CONSTITUTION: An object is a nano line pattern and is arranged on a chamber. An electron beam(500) is radiated to the object. A substrate(510) is exposed to the electron beam which passes through the object. An electron beam resister(530) exposed to the electron beam passing through the object is developed. The electron beam resister nano line pattern is formed. A magnetic nano line is formed by etching a magnetic material(520).