METHOD FOR MANUFACTURING NITROGEN COMPOUND SEMICONDUCTOR SUBSTRATE, NITROGEN COMPOUND SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING SINGLE CRYSTAL SIC SUBSTRATE, AND SINGLE CRYSTAL SIC SUBSTRATE,申请号KR20107027583-传众专利搜索

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发明名称	METHOD FOR MANUFACTURING NITROGEN COMPOUND SEMICONDUCTOR SUBSTRATE, NITROGEN COMPOUND SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING SINGLE CRYSTAL SIC SUBSTRATE, AND SINGLE CRYSTAL SIC SUBSTRATE
摘要
申请公布号	KR20110015009(A)	申请公布日期	2011.02.14
申请号	KR20107027583	申请日期	2009.06.09
申请人	AIR WATER, INC.	发明人	KAWAMURA KEISUKE;IZUMI KATSUTOSHI;ASAMURA HIDETOSHI;YOKOYAMA TAKASHI
分类号	H01L21/20;H01L27/12	主分类号	H01L21/20
代理机构		代理人
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