| 摘要 |
PURPOSE: A method of fabricating embedded flash memory devices is provided to improve the reliability of an embedded flash memory by etching a small part of a trapping nitride film without attack to SONOS. CONSTITUTION: A tunneling oxide film(140a), a trapping nitride film(140b), a blocking oxide film(140c) are successively laminated on a semiconductor substrate(100) to form an ONO film(140) is formed. The oxide-nitride-oxide film is patterned through a photolithography process. A fence forming material layer is coated over the semiconductor substrate including the patterned ONO film. The fence forming material layer is patterned to form a fence. A gate forming material layer(200) is formed over the semiconductor substrate including the fence. |
