| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent a bunker due to the gap of a lower insulating film by forming a spacer preventing the generation of gap between an etch stop layer and the bottom electrode. CONSTITUTION: An oxide film pattern is formed on a semiconductor substrate(300) including a lower electrode contact plug(320). A spacer(365) is formed in the sidewall of the oxide film pattern. A first sacrificial dielectric film(385) and a support layer(390) are formed over a side including the spacer. The support layer and a first sacrificial insulating film are etched to form a lower electrode region. The bottom electrode(420) is formed in the lower electrode region.
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