发明名称 |
STRUCTURE AND PROCESS FOR CONDUCTIVE CONTACT INTEGRATION |
摘要 |
<p>A semiconductor structure including a highly reliable high aspect ratio contact structure in which key-hole seam formation is eliminated is provided. The key-hole seam formation is eliminated in the present invention by providing a densified noble metal-containing liner within a high aspect ratio contact opening that is present in a dielectric material. The densified noble metal-containing liner is located atop a diffusion barrier and both those elements separate the conductive material of the inventive contact structure from a conductive material of an underlying semiconductor structure. The densified noble metal-containing liner of the present invention is formed by deposition of a noble metal-containing material having a first resistivity and subjecting the deposited noble metal-containing material to a densification treatment process (either thermal or plasma) that decreases the resistivity of the deposited noble metal-containing material to a lower resistivity.</p> |
申请公布号 |
KR20110014586(A) |
申请公布日期 |
2011.02.11 |
申请号 |
KR20107025283 |
申请日期 |
2008.09.23 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
YANG CHIH CHAO;GIGNAC LYNNE M. |
分类号 |
H01L21/768;H01L21/28 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|