| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element capable of having high light emission efficiency even by high-current-density driving. <P>SOLUTION: A nitride semiconductor light emitting element structure includes a light emitting layer (13) between one or more n-type layers (12) and one or more p-type layers (14, 15), and the light emitting layer includes one or more quantum well layers. At least one of well layers includes two or more first kind of sub-well layers (13a<SB>1</SB>, 13a<SB>2</SB>) having a relatively small band gap, and one or more second kind of sub-well layers (13a<SB>2</SB>) sandwiched between the first kind of sub-well layers and having a relatively large band gap. Each of the second kind of sub-well layers has a thickness of ≤4 nm, and functions as a crystalline recovery layer. The total thickness of the first kind of sub-well layers is >4 nm. <P>COPYRIGHT: (C)2011,JPO&INPIT |
